Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

Author

Inada, M. ; Yagi, S. ; Yamamoto, Yusaku ; Piao, G. ; Shimizu, Maiko ; Okumura, Hajime ; Arai, Kenta

Author_Institution

Power Electron. Res. Center, National Inst. of Adv. Ind. Sci. & Technol. Central, Ibaraki

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm² was obtained by shortening the drain-source length to 2.2 mum. The maximum transconductance g_m,max and the off-state breakdown voltage were 220 mS/mm and 35 V, respectively. Tradeoff characteristic of the specific on-resistance and the breakdown voltage of the AlGaN/GaN MES-gate HEMT exceeded theoretical limit of Si-based devices. In the case of the MIS-gate HEMTs, by shortening the source-drain length to 1.8 mum, the specific on-resistance lower than 0.17 mOmegacm² and the maximum drain current of 920 mA/mm were obtained

Keywords

III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; semiconductor device breakdown; wide band gap semiconductors; 1.8 micron; 35 V; Al₂O₃; AlGaN-GaN; HEMT devices; MES gate structures; MIS gate structures; Si; breakdown voltage; sapphire substrate; specific on-resistance; Aluminum gallium nitride; Contact resistance; Electric breakdown; Electrodes; Electrons; Gallium nitride; HEMTs; Metal-insulator structures; Ohmic contacts; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666085

Filename

1666085