DocumentCode
2367828
Title
A self protecting RF output with 2 kV HBM hardness
Author
Langguth, Gernot ; Gossmann, Timo ; Rauch, Stefan ; Kreppold, Bernd ; Wendel, Martin
Author_Institution
Infineon Technol. AG, Neubiberg
fYear
2007
fDate
16-21 Sept. 2007
Abstract
The present work focuses on the ESD protection of an RF output stage which consists of a fully silicided NMOS stack of mixed device type in a 2.8 V domain. The application of co-design measures improves the ESD hardness from 250 V to 2 kV HBM.
Keywords
CMOS integrated circuits; electrostatic discharge; radiofrequency integrated circuits; ESD protection; HBM hardness; RF CMOS circuits; self protecting RF output; silicided NMOS stack; voltage 2 kV; voltage 2.8 V; CMOS technology; Circuit topology; Coils; Diodes; Electrostatic discharge; MOS devices; Protection; Radio frequency; Variable structure systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401726
Filename
4401726
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