DocumentCode :
236795
Title :
System level analysis and benchmarking of graphene interconnects for low-power applications
Author :
Kumar, Vipin ; Nashed, Ramy ; Brenner, Kevin ; Sandhu, Ravi ; Naeemi, Azad
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2014
fDate :
4-8 Aug. 2014
Firstpage :
192
Lastpage :
197
Abstract :
Stochastic wiring distribution models are used to predict the improvement in energy obtained by replacing a few or all copper metal levels with graphene nanoribbons (GNRs) in a low-power digital circuit. The models developed here also estimate the degradation in the performance by replacing a few or all copper metal levels with GNRs. Replacing a few local copper interconnect levels with GNRs is expected to reduce the energy consumed by local interconnects, without severely degrading the performance of longer global interconnects. The hybrid GNR+copper interconnect is shown to perform worse compared to the all GNR interconnect, if the length of the GNR segment is greater than a critical value. For a logic circuit with 30k gates, it is shown that the hybrid interconnect offers a 30 to 40% decrease in energy and a 4× decrease in maximum frequency, whereas the all GNR interconnect offers a 50 to 60% decrease in energy and a 7× decrease in maximum frequency. Further, the impact of edge doping on the resistance per unit length of graphene is analyzed.
Keywords :
copper; graphene; integrated circuit interconnections; logic circuits; low-power electronics; nanoribbons; semiconductor doping; stochastic processes; C; Cu; GNR interconnect; GNR segment; benchmarking; copper interconnect levels; edge doping; graphene interconnects; graphene nanoribbons; hybrid GNR-copper interconnect; logic circuit; low-power applications; low-power digital circuit; stochastic wiring distribution models; system level analysis; Capacitance; Copper; Integrated circuit interconnections; Integrated circuit modeling; Logic gates; Repeaters; Resistance; Graphene; digital circuits; edge doping; interconnects; low-power; nanoribbons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC), 2014 IEEE International Symposium on
Conference_Location :
Raleigh, NC
Print_ISBN :
978-1-4799-5544-2
Type :
conf
DOI :
10.1109/ISEMC.2014.6898968
Filename :
6898968
Link To Document :
بازگشت