Fast step coverage simulation for 3D contact hole with analytical integral

Author

Shinzawa, Tsutomu ; Kato, Haruo

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

81

Lastpage

82

Abstract

We have developed a high speed Al CVD profile simulator for ULSI 3D contact filling using analytical integral for gas phase flux and re-emission flux from contact surface. The analytical integral formulation for 3D circular contact is described in detail. The analytical integral simulator has four times faster simulation speed than that using numerical integral. The simulation results agree well with observed experimental results except for the bottom coverage.

Keywords

ULSI; aluminium; chemical vapour deposition; digital simulation; integral equations; integrated circuit metallisation; semiconductor process modelling; 3D contact hole; Al; CVD profile simulator; ULSI; analytical integral formulation; bottom coverage; gas phase flux; re-emission flux; simulation speed; step coverage simulation; Analytical models; Circuit simulation; Filling; Integral equations; Integrated circuit interconnections; Integrated circuit technology; Laboratories; National electric code; Shadow mapping; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865282

Filename

865282