Title :
A 75 V Lateral IGBT for Junction-Isolated Smart Power Technologies
Author :
Bakeroot, B. ; Doutreloigne, J. ; Moens, Peter
Author_Institution :
ELIS-TFCG/IMEC, Ghent Univ.
Abstract :
A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds
Keywords :
current density; insulated gate bipolar transistors; isolation technology; power MOSFET; 0.35 micron; 75 V; CMOS core; LIGBT; current density; double buried layer structure; junction-isolated technology; lateral IGBT; lateral insulated gate bipolar transistor; smart power technology; Anodes; CMOS technology; Cathodes; Current density; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Silicon; Substrates; Voltage; insulated gate bipolar transistor (IGBT); junction-isolated technology; lateral IGBT (LIGBT); power semiconductor devices; switching transient;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666106
