Title :
Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs
Author :
Yamada, T. ; Horio, K.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Fukasaku, Japan
Abstract :
We have clarified the role of deep-acceptor-like surface states in slow current transients in GaAs MESFET´s. To reduce them, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface state density.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; semiconductor device models; surface states; transient analysis; GaAs; GaAs MESFET; deep acceptors; electron traps; slow current transients; surface states; two-dimensional simulation; Electron traps; Electrostatic discharge; Energy states; Gallium arsenide; Insulation; MESFETs; Modeling; Poisson equations; Systems engineering and theory; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865306
