Quantum tunneling behavior of nanocrystalline silicon/crystalline silicon heterostructure diode

Author

Lu, J.J. ; Jiang, Z.Z. ; Chen, J. ; Pan, W. ; Shen, W.Z.

Author_Institution

Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai

fYear

2008

fDate

24-27 March 2008

Firstpage

794

Lastpage

797

Abstract

We report the observation of various quantum behaviors of nanocrystalline silicon/crystalline silicon heterostructure diodes. Tunneling has been proved to be the dominant transport mechanism for the device-grade diode operating below 80 K. For the sample which is composed by highly ordered nanocrystalline silicon, interesting physical phenomena have been revealed, which include high electron mobility, resonant tunneling and periodical negative differential conductivity under different reverse bias regions. A number of temperature dependent current-voltage measurements have been done to support our observations. Theoretical self-consistent calculations further explain the quantum tunneling mechanisms behind the experimental results.

Keywords

electrical conductivity; electron mobility; elemental semiconductors; nanostructured materials; resonant tunnelling; semiconductor diodes; silicon; Si; crystalline silicon heterostructure diode; device-grade diode; electron mobility; nanocrystalline silicon; periodical negative differential conductivity; quantum tunneling behavior; resonant tunneling; reverse bias; temperature dependent current-voltage measurements; transport mechanism; Conductivity; Crystallization; Current measurement; Diodes; Electron mobility; Nanoscale devices; Resonant tunneling devices; Silicon; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585603

Filename

4585603