Title :
Harmful voltage overshoots due to turn-on behaviour of ESD protections during fast transients
Author :
Smedes, T. ; Guitard, N.
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
Due to the reaction time of the devices, the rise time of an ESD pulse has a strong effect on the efficiency of a protection network. (vf-)TLP clearly causes different failure modes depending on the rise time. This knowledge is needed to design protections that can handle fast ESD transients.
Keywords :
electrostatic discharge; transients; transmission lines; ESD protections; ESD transients; harmful voltage overshoots; reaction time; turn-on behaviour; vf-TLP systems; Current density; Electronic mail; Electrostatic discharge; Filters; Protection; Pulse circuits; Pulse measurements; Robustness; Time measurement; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401774
