• DocumentCode
    23688
  • Title

    AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- k Oxynitride \\</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Sato, Takao ; Okayasu, J. ; Takikawa, Michio ; Suzuki, Toshi-kazu</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Advantest Labs. Ltd., Sendai, Japan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>34</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>3</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2013</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Mar-13</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>375</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>377</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high-k) oxynitride TaO<sub>x</sub>N<sub>y</sub> gate dielectric (k ~24) obtained by sputtering deposition. The MIS-HEMTs show excellent pulsed current-voltage characteristics, small off-leakage currents (<; 10<sup>-10</sup> A/mm), high on/off current ratios (> 10<sup>10</sup>), and favorable threshold voltage stabilities. From comparisons with MIS-HEMTs with TaO<sub>x</sub> gate dielectric, we conclude that N incorporation in gate dielectric can suppress current collapse and deep-level states.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; aluminium compounds; dielectric devices; dielectric materials; gallium compounds; high electron mobility transistors; leakage currents; sputter deposition; tantalum compounds; voltage regulators; AlGaN-GaN-TaO<sub>x</sub>N<sub>y</sub>; MIS-HEMT; current collapse suppression; high on-off current ratio; metal-insulator-semiconductor high-electron-mobility transistor; pulsed current-voltage characteristics; small off-leakage current; sputtering deposition; threshold voltage stability; very high-k oxynitride gate dielectric; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; High K dielectric materials; Logic gates; MODFETs; <formula formulatype=$hbox{TaO}_{x}hbox{N}_{y}$; AlGaN-GaN; metal-insulator-semiconductor (MIS); oxynitride;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2237499
  • Filename
    6417950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=23688