Title :
Ion beam irradiation of high-temperature superconductors: From nano-size defects to the fabrication of nanodevices
Author :
Lang, W. ; Richter, H. ; Marksteiner, M. ; Siraj, K. ; Bodea, M.A. ; Pedarnig, J.D. ; Bäuerle, D. ; Hasenfuss, C. ; Palmetshofer, L. ; Kolarova, R. ; Bauer, P.
Author_Institution :
Fac. of Phys., Vienna Univ., Vienna
Abstract :
Ion-beam irradiation of high-temperature superconductors creates different types of defects depending on ion mass, energy and dose. Computer simulations reveal the diversity of the ion-target interactions with YBa2Cu3O7 and are compared to previous experimental results from transmission electron microscopy and electrical transport properties. While protons have a very low efficiency to create defects in YBa2Cu3O7, significantly heavier ions produce defect clusters and inhomogeneous damage in the target material. On the other hand, He+ ions with energy of about 75 keV do not implant into 100-nm thick films of YBa2Cu3O7 but primarily create point defects by displacement of the oxygen atoms. Such defects are very small and distributed homogeneously in YBa2Cu3O7. The small lateral straggle of the collision cascades allow for the patterning of nanostructures by directing a low divergence beam of He+ ions onto a thin film of YBa2Cu3O7 through a mask. Features with about 60 nm size have been produced and observed by transmission electron microscopy.
Keywords :
barium compounds; copper compounds; high-temperature superconductors; ion beam effects; nanopatterning; superconducting thin films; transmission electron microscopy; yttrium compounds; YBa2Cu3O7; defect clusters; electrical transport properties; high-temperature superconductors:; inhomogeneous damage; ion beam irradiation; ion-target interactions; nano-size defects; nanodevices fabrication; nanostructures patterning; oxygen displacement; transmission electron microscopy; Computer simulation; Fabrication; Helium; High temperature superconductors; Implants; Ion beams; Nanostructures; Protons; Thick films; Transmission electron microscopy;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585625