Title :
Preparation, characteristic and effect of annealing temperature of low voltage ZnO film varistor
Author :
Xia, Jz ; Ni, Xj
Author_Institution :
Phys. Dept., Zhejiang Shuren Univ., Hangzhou
Abstract :
ZnO thin films were deposited by means of gas discharge active reaction evaporation through at relatively lower temperatures. XRD and AFM patterns showed that the film with average size of crystal grains about 50 nm was highly c-axis oriented The mechanism behind the effect of annealing temperature on varistor characteristics of ZnO thin films was also discussed.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; discharges (electric); low-power electronics; varistors; zinc compounds; AFM; XRD; ZnO; annealing temperature; gas discharge active reaction evaporation; low voltage film varistor; Annealing; Low voltage; Nanoelectronics; Temperature; Varistors; Zinc oxide; Low voltage; ZnO thin film varistor; nonlinear coefficient; structure;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585626
