Title :
Low temperature deposited nano-structured vanadium oxide thin films for uncooled infrared detectors
Author :
Li, Guike ; Wang, Xiaodong ; Liang, Jiran ; Ji, An ; Hu, Ming ; Yang, Fuhua ; Liu, Jian ; Wu, Nanjian ; Chen, HongDa
Author_Institution :
Nat. Lab. for Superlattices & Microstructures, Chinese Acad. of Sci., Beijing
Abstract :
A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.
Keywords :
X-ray photoelectron spectra; crystallisation; infrared detectors; ion beam applications; micromechanical devices; scanning electron microscopy; sputtering; thin film circuits; thin film devices; vanadium compounds; SEM; V2O5; X-ray photoelectron spectroscopy; chemical composition; crystallization process; large temperature coefficient; low square resistance; low temperature deposited nanostructured vanadium oxide thin films; low temperature process; micromachined technology; room temperature; room temperature ion beam sputtering deposition; scanning electron microscopy; temperature 293 K to 298 K; uncooled infrared detectors; Annealing; Chemical technology; Infrared detectors; Ion beams; Scanning electron microscopy; Spectroscopy; Sputtering; Surface resistance; Temperature; Transistors;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585634