Title :
1.5M pixel imager with localized hole modulation method
Author :
Miida, T. ; Kawajiri, K. ; Terakago, H. ; Tsutomu Endo ; Okazaki, T. ; Yamamoto, S. ; Nishimura, A.
Author_Institution :
Innotech Corporation
Abstract :
A 1.SMpixel imager with 4.211m square pixel is composed of a single MOSFET and a pinned photo-diode. A localized high-density p-region near the source of MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.
Keywords :
CMOS process; Charge coupled devices; Colored noise; Diodes; Image converters; Image sensors; MOSFET circuits; Signal resolution; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.992092