DocumentCode :
2369613
Title :
1.5M pixel imager with localized hole modulation method
Author :
Miida, T. ; Kawajiri, K. ; Terakago, H. ; Tsutomu Endo ; Okazaki, T. ; Yamamoto, S. ; Nishimura, A.
Author_Institution :
Innotech Corporation
Volume :
2
fYear :
2002
fDate :
7-7 Feb. 2002
Firstpage :
26
Lastpage :
27
Abstract :
A 1.SMpixel imager with 4.211m square pixel is composed of a single MOSFET and a pinned photo-diode. A localized high-density p-region near the source of MOSFET converts the accumulated hole number to source voltage. Low random noise, low dark signal, high sensitivity with good color reproduction and resolution are achieved.
Keywords :
CMOS process; Charge coupled devices; Colored noise; Diodes; Image converters; Image sensors; MOSFET circuits; Signal resolution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
Type :
conf
DOI :
10.1109/ISSCC.2002.992092
Filename :
992092
Link To Document :
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