Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL)

Author

Tada, M. ; Sakamoto, T. ; Okamoto, K. ; Miyamura, M. ; Banno, N. ; Katoh, Y. ; Ishida, S. ; Iguchi, N. ; Sakimura, N. ; Hada, H.

Author_Institution

Green Innovation Res. Labs., NEC Corp., Sagamihara, Japan

fYear

2010

fDate

6-8 Dec. 2010

Abstract

A novel polymer solid-electrolyte (PSE) switch, NanoBridge, featuring forming-free programming and an extremely high OFF/ON resistance ratio of 10⁵ has been embedded in a 90nm-node CMOS by a fully logic-compatible process. Fast programming of 10nsec is also achieved in a 50nmφ 1k-bit-cell array by introducing the PSE, enabling a short and parallel programming. The OFF-state T₅₀ lifetime at 125°C is extrapolated to be more than 10 years. The developed switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic (NPL).

Keywords

CMOS digital integrated circuits; low-power electronics; random-access storage; CMOS; OFF-ON resistance; forming-free programming; fully logic-compatible process; low power nonvolatile programmable logic; nanobridge; polymer solid-electrolyte switch; size 90 nm; temperature 125 degC; time 10 ns;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703376

Filename

5703376