• DocumentCode
    2370064
  • Title

    High performance ultra-low energy RRAM with good retention and endurance

  • Author

    Cheng, C.H. ; Tsai, C.Y. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 104 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.
  • Keywords
    flash memories; low-power electronics; random-access storage; current 0.1 muA; energy 6 fJ; flash memory; non-volatile memory; power 0.3 muW; power 0.6 nW; switching energy; temperature 125 C; time 20 ns; ultra-low energy RRAM; voltage 3 V;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703392
  • Filename
    5703392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370064