• DocumentCode
    2370123
  • Title

    Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

  • Author

    Arehart, A.R. ; Sasikumar, A. ; Via, G.D. ; Winningham, B. ; Poling, B. ; Heller, E. ; Ringel, S.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    New constant drain-current deep level optical/transient spectroscopy (CID-DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels.
  • Keywords
    III-V semiconductors; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; hole traps; microwave field effect transistors; spectroscopy; wide band gap semiconductors; AlGaN-GaN; DLTS/DLOS method; RF stressed HEMT; drain current deep level optical/transient spectroscopy; frequency 10 GHz; high electron mobility transistors; spatially discriminating trap characterization methods; virtual gate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703396
  • Filename
    5703396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370123