The exposure process study of 100KV JBX-6300LS electron-beam nanolithograph system

We report on a series results of the performance of a Jeol model JBX-6300LS electron-beam nanolithography system operating at 100 KV. The exposure conditions are optimized to fabricate dense lines with 1:1 L/S and with the line-widths down to 30 nm for resist ZEP520A and PMMA. The lines show a very good uniformity within an area as large as 2 mmtimes2 mm. We obtained isolated metal lines with 22 nm widths through lift-off process based on 170 nm thick PMMA. Exposure studies were also performed for double layer resists to get a good under-cut cross section profile.