Title :
Reliability of enhancement-mode AlGaN/GaN HEMTs under ON-state gate overdrive
Author :
Ma, Chenyue ; Hongwei Chen ; Zhou, Chunhua ; Huang, Sen ; Yuan, Li ; Roberts, John ; Chen, Hongwei
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The ON-state reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology under gate overdrive is reported. A critical gate forward voltage (VGC) is observed, beyond which the turn-on voltage of the 2DEG channel exhibits a negative shift. This phenomenon is proposed to be caused by the impact ionization of the F ions in the barrier layer by hot electron injection. The proposed physical model is further validated by the temperature-dependent characterization of VGC that shows an eventual stabilization at higher temperatures (>;125°C), owing to the efficient removal of hot electrons by phonon scattering. The determination of VGC provides valuable guideline for the design of gate drive circuits of GaN power circuits.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power semiconductor devices; semiconductor device reliability; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; ON-state gate overdrive; enhancement-mode HEMT; fluorine plasma implantation technology; gate forward voltage; hot electron injection; phonon scattering; temperature-dependent characterization;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703399
