DocumentCode :
2370191
Title :
Electric field assisted fabrication on Si and HOPG surfaces by AFM
Author :
Jiao, Niandong ; Wang, Yuechao ; Xi, Ning ; Dong, Zaili
Author_Institution :
Shenyang Inst. of Autom., Chinese Acad. of Sci., Shenyang
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
1155
Lastpage :
1158
Abstract :
In this paper, we present two different results of oxidation using the same electric field assisted nano-fabrication method by atomic force microscope (AFM). Experiments were performed on silicon (Si) and highly oriented pyrolytic graphite (HOPG) surfaces respectively. Raised oxide lines were formed on Si surface, whereas sunken etch grooves were got on HOPG surface after the fabrication. We conclude that different materials may form different oxide structures in the oxidation fabrication: positive structure (raised oxide line) or negative structure (etch groove). By utilizing these oxide structures reasonably we may fabricate novel nano patterns and devices.
Keywords :
atomic force microscopy; elemental semiconductors; graphite; nanotechnology; oxidation; silicon; C; Si; atomic force microscope; electric field assisted nanofabrication; highly oriented pyrolytic graphite surfaces; negative structure; oxidation; positive structure; raised oxide line; silicon surfaces; sunken etch grooves; Fabrication; Nanoelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585687
Filename :
4585687
Link To Document :
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