Title :
High performance CMOS-compatible super-junction FINFETs for Sub-100V applications
Author :
Yoo, Abraham ; Ng, Wai Tung ; Sin, Johnny K O ; Wai Tung Ng
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
A novel lateral super-junction power FINFET (SJ-FINFET) structure suitable for integration is presented to address the challenges associated with sub-100V applications. The proposed lateral SJ-FINFET structure is compatible with advanced SOI-CMOS and FINFET fabrication technologies. It employs a 3D corrugated MOS channel and alternating n/p drift region pillars to achieve a 30% reduction in specific on-resistance when compared to conventional planar gate SJ-LDMOSFETs.
Keywords :
CMOS integrated circuits; power MOSFET; power integrated circuits; silicon-on-insulator; 3D corrugated MOS channel; FINFET fabrication technology; SOI-CMOS fabrication technology; high performance CMOS-compatible superjunction FINFET; n-p drift region pillars; planar gate SJ-LDMOSFET; power SJ-FINFET structure; specific on-resistance reduction;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703402
