DocumentCode :
2370595
Title :
Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays
Author :
Augustine, C. ; Raychowdhury, A. ; Somasekhar, D. ; Tschanz, J. ; Roy, K. ; De, Vivek K.
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
This paper presents a numerical analysis of four genres of STT-MTJ stacks. A comprehensive study based on critical memory performance metrics such as TMR, JC, and write cycle shows the relative merits and demerits of each stack for embedded memory applications. The impact of stray fields in memory stability and cell density is analyzed. It shows the benefits of Synthetic AntiFerromagnet (SAF) free layer in providing immunity against thermal disturbances in scaled technology generations.
Keywords :
embedded systems; numerical analysis; random-access storage; 1T-1R memory arrays; STT-MTJ stacks; cell density; embedded memory; memory stability; numerical analysis; synthetic antiferromagnet;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703416
Filename :
5703416
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370595
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