Title :
94 GHz Amplifier in SiGe Technology
Author :
Winkler, Wolfgang ; Borngräber, Johannes ; Korndörfer, Falk ; Scheytt, Christoph
Author_Institution :
Silicon Radar GmbH, Frankfurt (Oder)
Abstract :
A 94 GHz amplifier fabricated in 0.25 mum SiGe BiCMOS technology and using a novel transmission line structure is presented. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifier is designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 16.2 dB and a noise figure of 10.6 dB at 94 GHz. The power consumption is 61 mW from a 3.5 Volt supply. The design-style with top-plate ground used in this amplifier is a good candidate for IC-designs at even higher frequencies in silicon-based technologies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; integrated circuit design; millimetre wave amplifiers; transmission lines; BiCMOS technology; IC-designs; amplifiers; frequency 94 GHz; gain 16.2 dB; noise figure; noise figure 10.6 dB; power 61 mW; power consumption; silicon-based technology; size 0.25 mum; transmission line structure; two-stage cascode topology; voltage 3.5 V; BiCMOS integrated circuits; Circuit topology; Distributed parameter circuits; Energy consumption; Germanium silicon alloys; High power amplifiers; Impedance matching; Noise figure; Power transmission lines; Silicon germanium;
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
DOI :
10.1109/EUMC.2008.4751414
