Title :
Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs
Author :
Chung, Jinwook W. ; Kim, Tae-Woo ; Palacios, Tomás
Author_Institution :
MIT Microsyst. Technol. Labs., Cambridge, MA, USA
Abstract :
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (gm) with respect to the intrinsic DC gm. To reduce this gm-collapse and improve high frequency performance, we have developed a new technology based on a combination of vertical gate-recess, oxygen plasma treatment, and lateral gate-etch which has allowed us to fabricate AlGaN/GaN HEMTs with a record current-gain cutoff frequency (fT) of 225 GHz for a gate length (Lg) of 55 nm, and 162 GHz for an Lg of 110 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; advanced gate technology; current-gain cutoff frequency; frequency 162 GHz; frequency 225 GHz; high electron mobility transistors; intrinsic small-signal transconductance; lateral gate-etch; oxygen plasma treatment; size 110 nm; size 55 nm; vertical gate-recess;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703449
