DocumentCode :
2371577
Title :
Low-field mobility and high-field drift velocity in graphene nanoribbons and graphene bilayers
Author :
Bresciani, M. ; Paussa, A. ; Palestri, P. ; Esseni, D. ; Selmi, L.
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; graphene; nanoelectronics; phonons; semiconductor device models; Boltzmann transport equation; GNR; GbL; Monte Carlo BTE solver; graphene bilayers; graphene nanoribbons; high-field drift velocity; low-field mobility; nanoMOSFET; phonons; saturation velocity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703461
Filename :
5703461
Link To Document :
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