• DocumentCode
    2371577
  • Title

    Low-field mobility and high-field drift velocity in graphene nanoribbons and graphene bilayers

  • Author

    Bresciani, M. ; Paussa, A. ; Palestri, P. ; Esseni, D. ; Selmi, L.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine, Italy
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
  • Keywords
    Boltzmann equation; MOSFET; Monte Carlo methods; graphene; nanoelectronics; phonons; semiconductor device models; Boltzmann transport equation; GNR; GbL; Monte Carlo BTE solver; graphene bilayers; graphene nanoribbons; high-field drift velocity; low-field mobility; nanoMOSFET; phonons; saturation velocity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703461
  • Filename
    5703461
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2371577