DocumentCode
2371619
Title
Computational study of graphene nanoribbon FETs for RF applications
Author
Imperiale, I. ; Bonsignore, S. ; Gnudi, A. ; Gnani, E. ; Reggiani, S. ; Baccarani, G.
Author_Institution
Dept. of Electron., Univ. of Bologna, Bologna, Italy
fYear
2010
fDate
6-8 Dec. 2010
Abstract
The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
Keywords
energy gap; field effect transistors; graphene; high-k dielectric thin films; phonons; semiconductor doping; GNR-FET; RF application; acoustic phonon; asymmetrical doping; band-gap; full-quantum atomistic model; graphene nanoribbon; high-κ dielectric; high-frequency analog; saturation region; size 10 nm to 15 nm;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703463
Filename
5703463
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