Multi-scale simulation of partially unzipped CNT hetero-junction Tunneling Field Effect Transistor

Author

Leem, Larkhoon ; Srivastava, Ashutosh ; Li, Shuang ; Magyari-Köpe, Blanka ; Iannaccone, Giuseppe ; Harris, James S. ; Fiori, Gianluca

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2010

fDate

6-8 Dec. 2010

Abstract

Band-to-band Tunneling Field Effect Transistors (TFETs) are emerging as a solution to break classical 60mV/dec sub-threshold slope limit of conventional MOSFETs. In this work, we present for the first time multi-scale simulation results of partially unzipped Carbon Nanotube heterojunction TFET. Compared to the CNT and GNR homojunction TFETs, GNR/CNT heterojunction TFETs demonstrate superior sub-threshold region characteristics - 10⁴× smaller I_off, 61% smaller Subthreshold Swing (SS) which lies in the range of 22~26mV/dec and the I-V ambipolarity is completely eliminated.

Keywords

MOSFET; carbon nanotubes; field effect transistors; semiconductor heterojunctions; semiconductor nanotubes; tunnel transistors; tunnelling; CNT heterojunction TFET; GNR heterojunction TFET; GNR homojunction TFET; I-V ambipolarity; band-to-band tunneling field effect transistors; conventional MOSFET; multiscale simulation; partially unzipped CNT heterojunction tunneling field effect transistor; partially unzipped carbon nanotube heterojunction TFET; sub-threshold slope limit; subthreshold region characteristics; subthreshold swing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703465

Filename

5703465