Title :
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
Author :
Nogami, T. ; Bolom, T. ; Simon, A. ; Kim, B-Y ; Hu, C-K ; Tsumura, K. ; Madan, A. ; Baumann, F. ; Wang, Y. ; Flaitz, P. ; Parks, C. ; DeHaven, P. ; Davis, R. ; Zaitz, M. ; Lawrence, B. St ; Murphy, R. ; Tai, L. ; Molis, S. ; Rhee, S-H ; Usui, T. ; Cabral,
Author_Institution :
Albany Nano Technol. Res. Center, IBM, Albany, NY, USA
Abstract :
A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods. CuMn was confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) reliability for the same Cu line resistance (R). Both low R and high reliability (EM, SM, and TDDB) were achieved. Improved extendibility of CuMn relative to CuAl was also supported by studies of alloy interactions with advanced liner materials Ru and Co, and by enhancement of ultra-thin TaN barrier performance.
Keywords :
aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; manganese alloys; tantalum compounds; vapour deposited coatings; BEOL; CuAl; CuMn; PVD process; TaN; back end of line technology; electromigration reliability; liner materials; seed layer; size 32 nm; ultra low-k;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703471
