DocumentCode
2372002
Title
Analysis of the IGBT/freewheeling diode switching behaviour during turn-on in hard switching applications
Author
Rahimo, M.T. ; Chamund, D.J. ; Shammas, N.Y.A.
Author_Institution
Mital Semicond., UK
fYear
1998
fDate
21-23 Sep 1998
Firstpage
381
Lastpage
386
Abstract
The aim of the work presented in this paper is to gain a better understanding of the IGBT, freewheeling diode and circuit interaction during turn-on in a hard switching inductive load application. The main factors influencing the switching speed (commutating di/dt) and the turn-on losses in both the IGBT and freewheeling diode are discussed and analysed with the aid of simulation and experimental results. This study is particularly important in order to reach to some important conclusions on the device and circuit design requirements for optimum performance. Also, it provides a more detailed insight on the device and circuit topology that allows an acceptable compromise between switching speed, power dissipation and electromagnetic radiation
Keywords
insulated gate bipolar transistors; IGBT; circuit design; circuit interaction; circuit topology; electromagnetic radiation; freewheeling diode; hard switching applications; inductive load application; optimum performance; power dissipation; switching behaviour; switching speed; turn-on losses;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable Speed Drives, 1998. Seventh International Conference on (Conf. Publ. No. 456)
Conference_Location
London
ISSN
0537-9989
Print_ISBN
0-85296-704-7
Type
conf
DOI
10.1049/cp:19980555
Filename
732073
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