A fast and low actuation voltage MEMS switch for mm-wave and its integration

Author

Akiba, Akira ; Mitarai, Shun ; Morita, Shinya ; Ikeda, Koichi ; Kurth, Steffen ; Leidich, Stefan ; Bertz, Andreas ; Nowack, Markus ; Froemel, Joerg ; Gessner, Thomas

Author_Institution

RF Transm. & Video Syst. Dev. Div., Sony Corp., Atsugi, Japan

fYear

2010

fDate

6-8 Dec. 2010

Abstract

A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.

Keywords

low-k dielectric thin films; microswitches; millimetre wave devices; Al; fast actuation MEMS switch; frequency 60 GHz; low actuation voltage MEMS switch; metal layer silicon interposer technology; millimeter wave MEMS switch; silicon interposer chip; single pole single throw switch; size 12 mum; size 3 mum; thick low-k benzocyclobutene interlayer dielectrics; voltage 5 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703487

Filename

5703487