Title :
Modeling of SEU from individual nuclear particles
Author :
Loginov, Victor V.
Author_Institution :
Moscow Inst. of Electron. Eng., Moscow
Abstract :
Problems of modeling of the SOS and SOI MOSFETs that are working in irradiation conditions was analyzed in this work. Case of SEU was modeled.
Keywords :
MOSFET; radiation effects; semiconductor device models; silicon-on-insulator; SOI MOSFETs; SOS MOSFETs; irradiation; nuclear particles; single-event upsets; Character generation; Dielectric substrates; Dielectrics and electrical insulation; Energy exchange; Insulation life; Isolation technology; MOSFETs; Nuclear power generation; Silicon on insulator technology; Single event upset; Modeling; irradiation; silicon on insulator; single-event upset;
Conference_Titel :
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location :
Novosibirsk
Print_ISBN :
978-5-7782-0893-3
DOI :
10.1109/SIBEDM.2008.4585839
