DocumentCode
2373210
Title
A sunken phase in aluminum-copper interconnects as a new kind of stress void
Author
Shin, Hank
Author_Institution
Adv. Technol. Center, Motorola Inc., Mesa, AZ, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
292
Lastpage
294
Abstract
A new kind of stress void in Al-1.5% Cu interconnects, a sunken phase (or depleted region), was noticed as an intermediate phase which evolved to a complete void by further diffusion during later processes. It has a unique hexagonal shape with a flat bottom plane and was formed not only at grain boundaries but inside grains. The formation of sunken phases is dominant on large metal pads and with tensile interlayer dielectrics (ILDs) such as ozone-PE-TEOS glass and spin-on-glass (SOG). The evolution sequence from a circular phase, a precursor of a sunken phase, to a complete void is described based upon microstructure observations by optical microscope and scanning electron microscopy (SEM)
Keywords
VLSI; aluminium alloys; copper alloys; metallisation; reliability; Al-Cu alloys; SEM; SOG; TEOS glass; VLSI; circular phase; complete void; depleted region; evolution sequence; flat bottom plane; grain boundaries; hexagonal shape; inside grains; large metal pads; microstructure observations; multilevel interconnection; optical microscope; reliability issues; scanning electron microscopy; spin-on-glass; stress induced voiding; stress void; sunken phase; tensile interlayer dielectrics; vacancy diffusion; Chemical analysis; Crystals; Grain boundaries; Impurities; Nearest neighbor searches; Optical films; Optical microscopy; Scanning electron microscopy; Shape; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153003
Filename
153003
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