• DocumentCode
    2373210
  • Title

    A sunken phase in aluminum-copper interconnects as a new kind of stress void

  • Author

    Shin, Hank

  • Author_Institution
    Adv. Technol. Center, Motorola Inc., Mesa, AZ, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    292
  • Lastpage
    294
  • Abstract
    A new kind of stress void in Al-1.5% Cu interconnects, a sunken phase (or depleted region), was noticed as an intermediate phase which evolved to a complete void by further diffusion during later processes. It has a unique hexagonal shape with a flat bottom plane and was formed not only at grain boundaries but inside grains. The formation of sunken phases is dominant on large metal pads and with tensile interlayer dielectrics (ILDs) such as ozone-PE-TEOS glass and spin-on-glass (SOG). The evolution sequence from a circular phase, a precursor of a sunken phase, to a complete void is described based upon microstructure observations by optical microscope and scanning electron microscopy (SEM)
  • Keywords
    VLSI; aluminium alloys; copper alloys; metallisation; reliability; Al-Cu alloys; SEM; SOG; TEOS glass; VLSI; circular phase; complete void; depleted region; evolution sequence; flat bottom plane; grain boundaries; hexagonal shape; inside grains; large metal pads; microstructure observations; multilevel interconnection; optical microscope; reliability issues; scanning electron microscopy; spin-on-glass; stress induced voiding; stress void; sunken phase; tensile interlayer dielectrics; vacancy diffusion; Chemical analysis; Crystals; Grain boundaries; Impurities; Nearest neighbor searches; Optical films; Optical microscopy; Scanning electron microscopy; Shape; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153003
  • Filename
    153003