DocumentCode
2373312
Title
Silicon thermal oxidation models comparison used in TCAD Sentaurus process and fact
Author
Kuznetsov, Dmitry O.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk
fYear
2008
fDate
1-5 July 2008
Firstpage
88
Lastpage
90
Abstract
The present paper deal with research and comparison of models of thermal oxidation of the silicon, used in TCAD Sentaurus Process and Fact. Data comparative analysis of modelling of typical industrial modes is done. Conclusion concerning models urgency and applicability is made.
Keywords
elemental semiconductors; oxidation; silicon; technology CAD (electronics); Si; TCAD sentaurus process and fact; silicon thermal oxidation models; Atmospheric modeling; Attenuation; Conferences; Data analysis; Mathematical model; Oxidation; Semiconductor device modeling; Semiconductor process modeling; Silicon compounds; Software packages; Fact; Sentaurus process; TCAD; modeling; thermal oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location
Novosibirsk
ISSN
1815-3712
Print_ISBN
978-5-7782-0893-3
Type
conf
DOI
10.1109/SIBEDM.2008.4585855
Filename
4585855
Link To Document