DocumentCode
2373674
Title
Investigation of generation process in narrowband MIS structures
Author
Nastovjak, Artem E. ; Polovinkin, Vladimir G.
Author_Institution
Inst. of Semicond. Phys. SB RAS, Novosibirsk
fYear
2008
fDate
1-5 July 2008
Firstpage
76
Lastpage
78
Abstract
in the paper method of automatic measurements of non-equilibrium depletion relaxation in MIS structures was offered. Simple relaxation process model based on assumption of infinite capacitance of inversion layer was proposed.
Keywords
MIS structures; automatic measurements; infinite capacitance; inversion layer; narrowband MIS structures; nonequilibrium depletion relaxation; relaxation process model; Narrowband; CID; IR FPA; MIS; Non-equilibrium depletion; relaxation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
Conference_Location
Novosibirsk
ISSN
1815-3712
Print_ISBN
978-5-7782-0893-3
Type
conf
DOI
10.1109/SIBEDM.2008.4585872
Filename
4585872
Link To Document