• DocumentCode
    2373720
  • Title

    Effect of magnetic field on the current-voltage characteristics of PbSnTe:In films

  • Author

    Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk
  • fYear
    2008
  • fDate
    1-5 July 2008
  • Firstpage
    84
  • Lastpage
    87
  • Abstract
    Transport of charge carriers in Pb1-xSnxTe:In films at helium temperatures in regimes dominated by charge-carrier injection out of contacts is discussed. Data illustrating the effect of constant magnetic field on the injection currents are reported. Possible mechanisms of observed phenomena are discussed.
  • Keywords
    IV-VI semiconductors; indium; lead compounds; magnetic field effects; thin films; PbSnTe:In; PbSnTe:In films; charge carrier transport; charge-carrier injection; current-voltage characteristics; magnetic field effect; Charge carriers; Current; Current-voltage characteristics; Dielectric materials; Ferroelectric films; Magnetic films; Optical films; Semiconductor films; Temperature; Voltage; injection from contacts; magnetoresistance; narrow-gap semiconductor; traps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on
  • Conference_Location
    Novosibirsk
  • ISSN
    1815-3712
  • Print_ISBN
    978-5-7782-0893-3
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2008.4585874
  • Filename
    4585874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2373720