Theoretical model for carriers transport in nanocrystalline porous silicon films

Author

Ciurea, M.L. ; Iancu, V. ; Pavelescu, G. ; Baltog, I.

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

109

Abstract

A quantum confinement model is proposed to explain the carriers transport in a nanowire network of porous silicon. The electron Hamiltonian is written as a sum of the longitudinal and the transversal contributions. The last one corresponds to a two-dimensional infinite cylindrical quantum well, whose energy levels determine the activation energies observed in the temperature dependence of the dark current. The model is in excellent agreement with the experimental data

Keywords

electrical conductivity; elemental semiconductors; nanostructured materials; porous semiconductors; semiconductor quantum wells; semiconductor thin films; silicon; Si; activation energy; carrier transport; dark current; electron Hamiltonian; energy level; nanocrystalline porous silicon film; nanowire network; quantum confinement model; temperature dependence; two-dimensional quantum well; Artificial intelligence; Carrier confinement; Dark current; Low voltage; Nanowires; Photoluminescence; Photonic band gap; Semiconductor films; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732300

Filename

732300