Title :
Theoretical model for carriers transport in nanocrystalline porous silicon films
Author :
Ciurea, M.L. ; Iancu, V. ; Pavelescu, G. ; Baltog, I.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Abstract :
A quantum confinement model is proposed to explain the carriers transport in a nanowire network of porous silicon. The electron Hamiltonian is written as a sum of the longitudinal and the transversal contributions. The last one corresponds to a two-dimensional infinite cylindrical quantum well, whose energy levels determine the activation energies observed in the temperature dependence of the dark current. The model is in excellent agreement with the experimental data
Keywords :
electrical conductivity; elemental semiconductors; nanostructured materials; porous semiconductors; semiconductor quantum wells; semiconductor thin films; silicon; Si; activation energy; carrier transport; dark current; electron Hamiltonian; energy level; nanocrystalline porous silicon film; nanowire network; quantum confinement model; temperature dependence; two-dimensional quantum well; Artificial intelligence; Carrier confinement; Dark current; Low voltage; Nanowires; Photoluminescence; Photonic band gap; Semiconductor films; Silicon; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732300
