DocumentCode
2377131
Title
A general model for PVD aluminum deposition
Author
Cale, T.S. ; Gandy, T.H. ; Jain, M.K. ; Ramaswami, M. ; Raupp, G.B.
Author_Institution
Dept. of Chem., Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
fYear
1991
fDate
11-12 Jun 1991
Firstpage
350
Lastpage
352
Abstract
A model for free molecular transport, surface diffusion and heterogeneous reactions in features during low pressure deposition processes is specialized to simulate film profile evolution during sputtered Al PVD. The dimensionless parameter which results from nondimensionalizing the governing equation dictates film profiles. Feature size dependent step coverages are demonstrated in trenches of aspect ratio one
Keywords
aluminium; metallic thin films; metallisation; sputter deposition; surface diffusion; Al sputtering; PVD; aspect ratio; feature size dependent step coverages; film profile evolution; free molecular transport; heterogeneous reactions; low pressure deposition; model; surface diffusion; Aluminum; Artificial intelligence; Atherosclerosis; Biological materials; Chemical engineering; Chemical processes; Differential equations; Predictive models; Solid modeling; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location
Santa Clara, CA
Print_ISBN
0-87942-673-X
Type
conf
DOI
10.1109/VMIC.1991.153022
Filename
153022
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