• DocumentCode
    2378035
  • Title

    Conducting and semiconducting end-capped oligothiophenes for thin films devices in organic electronics

  • Author

    Videlot-Ackermann, Christine ; Ackermann, Jorg ; Brisset, Hugues ; Raynal, Pascal ; Moggia, Fabrice ; Fages, Frédéric ; Kawamura, Koji ; Yoshimoto, Noriyuki

  • Author_Institution
    Groupe de Chimie Organique et Mat?riaux Mol?culaires, GCOM2 UMR CNRS 6114, Universit? de la M?diterran?e, Facult? des Sciences de, Luminy Case 901, 163 av. de Luminy, F-13288 Marseille cedex 09, FRANCE. videlot@luminy.univ-mrs.fr
  • fYear
    2006
  • fDate
    Nov. 2006
  • Firstpage
    4894
  • Lastpage
    4899
  • Abstract
    Critical to the development of organic electronics is the design and synthesis of new organic semiconductors with improved electrical performances and enhanced environmental stability. We present in this communication a series of simple oligothiophene derivatives that bear the styryl (DS-nT) or pyrene (Py-nT) unit as terminal substituents. Thin-film field-effect transistors incorporating DS-nT show high electrical performance, such as mobilities as high as 0.1 cm2/Vs, along with exceptional stability under ambient conditions. Especially, the longer oligomer DS-4T containing the quaterthiophene core gives rise to devices that show no decrease in performance after more than 17 months of storage and under continuous operation. Such stability features are unprecedented in the oligothiophene series. Py-nT thin films were doped with molecular iodine, which led to a 106 fold increase of electric conductivity. In the case of Py-4T, a value of 1 S cm¿1 was obtained after 21 minutes exposure to iodine vapor.
  • Keywords
    Atomic force microscopy; Conductivity; Organic electronics; Organic thin film transistors; Semiconductivity; Semiconductor thin films; Stability; Thin film devices; Thin film transistors; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
  • Conference_Location
    Paris, France
  • ISSN
    1553-572X
  • Print_ISBN
    1-4244-0390-1
  • Type

    conf

  • DOI
    10.1109/IECON.2006.347818
  • Filename
    4153706