DocumentCode :
2378278
Title :
High Speed Dynamic Bias Switching Power Amplifier for OFDM Applications
Author :
Cha, Jukyung ; Jun, Youngsang ; Nam, Sangwook
Author_Institution :
Samsung Thales, Yongin
fYear :
2008
fDate :
27-31 Oct. 2008
Firstpage :
1683
Lastpage :
1686
Abstract :
An efficiency-enhanced power-amplifier system using dynamic bias switching method is presented. The presented system generates two different voltage sources from one source for drain bias of a RF power amplifier. The drain of the RF power amplifier is biased at low voltage level while the input RF signal is detected to be small. The drain bias is rapidly changed to high voltage level when the input RF signal reaches a certain threshold level. The measured drain bias at VH state is 4.6V with the efficiency of the bias switching system, 49% and at VL is 2.94V with 86%. The measured result shows that the overall efficiency of the proposed RF power amplifier is improved by 62% compared to that of the fixed bias amplifier, when OFDM signal with bandwidth 8.46MHz is applied.
Keywords :
OFDM modulation; power amplifiers; bandwidth 8.46 MHz; drain bias; dynamic bias switching; orthogonal frequency division multiplexing; power amplifiers; voltage 2.94 V; voltage 4.6 V; High power amplifiers; Low voltage; OFDM; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Switching systems; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. EuMC 2008. 38th European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-006-4
Type :
conf
DOI :
10.1109/EUMC.2008.4751798
Filename :
4751798
Link To Document :
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