Title :
Medium power, medium voltage, large area 6H-SiC pn junctions
Author :
Chante, J.P. ; Locatelli, M.L. ; Millan, J. ; Godignon, P. ; Savkina, N.S. ; Giagovskii, A.A. ; Lebedev, A. ; Badila, M. ; Brezeanu, G. ; Tudor, B. ; Sorescu, M. ; Banoiu, G. ; Bica, G. ; Banu, V.
Author_Institution :
CEGELY-INSA de Lyon, France
Abstract :
Our paper reports technology and electrical characteristics of medium power, medium voltage, large area 6H-SiC pn junctions, fabricated in a factory environment
Keywords :
p-n junctions; silicon compounds; wide band gap semiconductors; SiC; electrical characteristics; fabrication technology; medium power medium voltage large area 6H-SiC p-n junction; Boron; Data mining; Diodes; Epitaxial growth; Medium voltage; Metallization; Nitrogen; Plasma temperature; Silicon carbide; Substrates;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732386
