• DocumentCode
    2379455
  • Title

    0.8nm EOT and High Hole Mobility of Ge P-MISFETs Using HfAlO/GeOx/Ge Gate Stacks Formed by Plasma Oxidation and Atomic Layer Deposition

  • Author

    Kamimuta, Yuuichi ; Ikeda, Keiji ; Oda, Minoru ; Moriyama, Yoshihiko ; Tezuka, Tsutomu

  • Author_Institution
    Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In conclusion, HfAlO/GeOx/Ge p-MISFETs with EOT of 0.84nm are demonstrated. Low interface trap density of GeOx/Ge interface enable us to high mobility. Careful control of high-k fixed charges will allow achieving low EOT and high mobility of Ge p-MISFETs.
  • Keywords
    MISFET; aluminium compounds; atomic layer deposition; germanium compounds; hafnium compounds; high-k dielectric thin films; hole mobility; interface states; oxidation; plasma materials processing; EOT; HfAlO-GeOx-Ge; atomic layer deposition; gate stacks; high hole mobility; high-k fixed charges; low interface trap density; p-MISFET; plasma oxidation; size 0.84 nm; Aluminum oxide; High K dielectric materials; Logic gates; MISFETs; Plasmas; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222445
  • Filename
    6222445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2379455