Title :
0.8nm EOT and High Hole Mobility of Ge P-MISFETs Using HfAlO/GeOx/Ge Gate Stacks Formed by Plasma Oxidation and Atomic Layer Deposition
Author :
Kamimuta, Yuuichi ; Ikeda, Keiji ; Oda, Minoru ; Moriyama, Yoshihiko ; Tezuka, Tsutomu
Author_Institution :
Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
In conclusion, HfAlO/GeOx/Ge p-MISFETs with EOT of 0.84nm are demonstrated. Low interface trap density of GeOx/Ge interface enable us to high mobility. Careful control of high-k fixed charges will allow achieving low EOT and high mobility of Ge p-MISFETs.
Keywords :
MISFET; aluminium compounds; atomic layer deposition; germanium compounds; hafnium compounds; high-k dielectric thin films; hole mobility; interface states; oxidation; plasma materials processing; EOT; HfAlO-GeOx-Ge; atomic layer deposition; gate stacks; high hole mobility; high-k fixed charges; low interface trap density; p-MISFET; plasma oxidation; size 0.84 nm; Aluminum oxide; High K dielectric materials; Logic gates; MISFETs; Plasmas; Silicon; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222445
