Title :
Germanium Channel P-Mosfet with TiO2/Al2O3 Bilayer High-K Gate Stacks and Solutions for Metal/TiO2 Interface Stability
Author :
Zhang, Liangliang ; Gungi, Marika ; McIntyre, Paul C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
The TiO2/Al2O3 layers are fabricated by atomic layer deposition (ALD), which provides precise control of monolayer film thicknesses. The samples were fabricated using a similar method to that reported in. Low capacitance equivalence thickness (CET) and small frequency dispersion of the capacitance are achieved with optimized process parameters.
Keywords :
MOSFET; aluminium compounds; atomic layer deposition; elemental semiconductors; germanium; semiconductor device manufacture; titanium compounds; P-MOSFET; TiO2-Al2O3; atomic layer deposition; bilayer high-k gate stacks; capacitance equivalence thickness; frequency dispersion; germanium channel; interface stability; monolayer film thicknesses; Aluminum oxide; Capacitance-voltage characteristics; Germanium; Logic gates; MOSFETs; Tungsten;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222448
