Title :
Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping
Author :
Huang, Yi-Chiau ; Li, Jiping ; Jin, Miao ; Wood, Bingxi ; Sanchez, Errol ; Kim, Yihwan
Author_Institution :
Appl. Mater., Inc., Sunnyvale, CA, USA
Abstract :
This paper presented the selective epitaxial germanium growth on silicon by trench filling and doping. The process operated in a reaction rate limited regime at a low temperature (350°C to 400°C) to ensure reasonable growth rate, decent surface morphology, and high dopant incorporation in Ge.
Keywords :
boron; doping profiles; elemental semiconductors; epitaxial growth; germanium; phosphorus; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface morphology; Ge:B; Ge:P; Si; in situ doping; selective epitaxial germanium growth; surface morphology; temperature 350 degC to 400 degC; trench filling; Annealing; Arrays; Conductivity; Doping; MOSFETs; Silicon;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222456
