Charge Carrier Traffic at Self-Assembled Ge Quantum Dots on Si

Author

Kaniewska, M. ; Engström, O. ; Karmous, A. ; Petersson, G. ; Kasper, E.

Author_Institution

Anal. of Semicond. Nanostruct., Inst. of Electron Technol., Warsaw, Poland

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

In this paper the voltage dependent occupation of states and their filling dynamics is investigated in two terminal device structures (Schottky barrier diode, p/n junction) by capacitance voltage (C-V) and deep level transient spectroscopy (DLTS) methods. Frequency scanned DLTS (FS-DLTS) was used, where the DLTS signal at a constant temperature is measured as a function of the repetition frequency of electrical pulses, f, with the emission voltage of the pulses, VR, as a parameter.

Keywords

Schottky diodes; deep level transient spectroscopy; elemental semiconductors; germanium; p-n junctions; self-assembly; semiconductor quantum dots; C-V methods; FS-DLTS; Ge-Si; Schottky barrier diode; Si; capacitance-voltage methods; charge carrier traffic; deep level transient spectroscopy; electrical pulses; emission voltage; filling dynamics; frequency scanned DLTS; p-n junction; repetition frequency; self-assembled quantum dots; two terminal device structures; voltage dependent occupation of states; Energy states; Frequency measurement; Quantum dots; Schottky diodes; Silicon; Temperature measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222462

Filename

6222462