Terahertz Imaging Using Strained-Si MODFETs as Sensors

Author

Meziani, Y.M. ; García-García, E. ; Velázquez-Pérez, J.E. ; Coquillat, D. ; Dyakonova, N. ; Knap, W. ; Grigelionis, I. ; Fobelets, K.

Author_Institution

Dipt. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

2

Abstract

Development of new terahertz (THz) sensors is increasing in interest due to their potential for THz imaging and spectroscopy. One alternative to develop direct THz sensors is based in the oscillation of the plasma waves in the channel of sub-micron FETs.The n-channel Si/SiGe MODFETs used in this study were grown by MBE on a thick relaxed SiGe virtual substrate grown by low-energy PECVD on plain Si wafers.

Keywords

CMOS image sensors; Ge-Si alloys; MOSFET; bow-tie antennas; elemental semiconductors; focal planes; high electron mobility transistors; oscillations; silicon; terahertz spectroscopy; terahertz wave detectors; terahertz wave imaging; CMOS technology; III-V device; NEP; Si-MOSFET; Si-SiGe; THz spectroscopy; Terahertz imaging; channel mobility; focal plane array; heterosystem; integrated bow-tie coupling antenna; n-MOS Si FET; noise equivalent power; nonresonant detection; oscillation; plasma wave; strained-Si MODFET; strained-Si transistor; submicron FET; terahertz sensor; FETs; Image sensors; Logic gates; Sensors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International

Conference_Location

Berkeley, CA

Print_ISBN

978-1-4577-1864-9

Electronic_ISBN

978-1-4577-1863-2

Type

conf

DOI

10.1109/ISTDM.2012.6222464

Filename

6222464