Title :
Metal-Insulator-Semiconductor Contacts on Ge: Physics and Applications
Author :
Lin, J. -Y Jason ; Roy, Arunanshu M. ; Sun, Yun ; Saraswat, Krishna C.
Author_Institution :
Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We achieve a 70× reduction in ρc to 1.28×10-6Ωcm2 using MIS contacts with TiO2. The effectiveness of this method is understood in terms of ΦBN, band offsets, and the metal/TiO2 interface. Finally, TiO2 MIS contacts were integrated on Ge N-MOSFETs.
Keywords :
MIS structures; MOSFET; elemental semiconductors; germanium; titanium compounds; Ge; MIS contacts; N-MOSFET; TiO2; band offsets; metal-insulator-semiconductor contacts; Aluminum oxide; Contact resistance; Logic gates; MOSFET circuits; Resistance; Tunneling;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222473
