A tunable micro-ring notch filter

Author

Grover, R. ; Brahim, T.A. ; Kanakaraju, S. ; Lucas, L. ; Calhoun, L.C. ; Ho, P.-T.

Author_Institution

Lab. for Phys. Sci., College Park, MD, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

285

Abstract

This paper demonstrates electro-optic tuning of a laterally-coupled GaInAsP-InP micro-ring resonators. The device is a p-i-n diode, with the intrinsic region of forming the waveguide core. The intrinsic region is composed of a superlattice of quantum wells. By applying a reverse bias, the resonance wavelength is tuned by 0.8 nm (100 GHz) over 8 V using the quadratic electro-optic effect. The quadratic electro-optic coefficient is estimated to be 4.9 × 10^-15 cm²/V². Independent measurements of the electro-optic characteristics of the wafer is also presented.

Keywords

III-V semiconductors; electro-optical effects; gallium compounds; indium compounds; integrated optics; micro-optics; micromechanical resonators; notch filters; optical resonators; optical tuning; optical waveguide filters; p-i-n diodes; semiconductor quantum wells; 100 GHz; 8 V; GaInAsP-InP; microracetrack notch filter; microring notch filter; p-i-n diode; quadratic electro-optic effect; quantum well superlattice; tunable notch filter; waveguide core; Absorption; Educational institutions; Erbium-doped fiber amplifier; Etching; Fabrication; Optical resonators; Optical waveguides; Photonic band gap; Resonator filters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251749

Filename

1251749