Title :
First order quasi-static SOI MOSFET channel capacitance model
Author :
Sharma, Sameer ; Johnson, L.G.
Author_Institution :
Oklahoma State University, Stillwater, 74075, USA
Keywords :
Capacitance; Circuit simulation; Energy storage; Equations; MOSFET circuits; Mathematical model; Power MOSFET; Power dissipation; Predictive models; Propagation delay;
Conference_Titel :
Very Large Scale Integration, 2007. VLSI - SoC 2007. IFIP International Conference on
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
978-1-4244-1710-0
Electronic_ISBN :
978-1-4244-1710-0
DOI :
10.1109/VLSISOC.2007.4402470
