Investigation on dual gate oxide charging damage in 0.13μm copper damascene technology

Author

Teo, W.Y. ; Hou, Y.T. ; Li, M.-F. ; Chen, P. ; Ko, L.H. ; Zeng, X. ; Jin, Y. ; Gn, F.H. ; Chan, L.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2002

fDate

2002

Firstpage

14

Lastpage

17

Abstract

The plasma charging damage in 0.13 μm dual gate oxide Cu-damascene process is studied here. It was found in our experiments that the leaky feature of 20Å (EOT) gate oxide makes thin gate oxide only susceptible to charging damage from high density plasma inter-layer dielectric (HDP ILD) deposition. However, application of PETEOS IMD deposition leads to obvious charging damage to the thick gate oxide.

Keywords

dielectric thin films; integrated circuit interconnections; leakage currents; plasma deposition; silicon compounds; surface treatment; 0.13 micron; 20 A; Cu; Cu dual damascene process; PETEOS IMD deposition; SiO₂; antenna structures; dual gate oxide charging damage; effective oxide thickness; gate oxide thickness; high density plasma inter-layer dielectric deposition; initial gate leakage measurements; Antenna measurements; Copper; Diodes; Gate leakage; MOS devices; Plasma devices; Plasma measurements; Protection; Testing; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Print_ISBN

0-9651577-7-6

Type

conf

DOI

10.1109/PPID.2002.1042598

Filename

1042598