Title :
Improved step coverage of silane-based PECVD nitride and oxynitride passivation films
Author :
Pang, Bin ; Cheung, David ; Petro, William G.
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
The effects of gas flow and electrode spacing on the step coverage of silane-based nitride and oxynitride films formed by plasma-enhanced chemical-vapor deposition have been studied. It was found that the sidewall step coverage and sidewall film wet etch rate can be improved by varying these process parameters
Keywords :
VLSI; integrated circuit technology; metallisation; passivation; plasma CVD; PECVD; Si3N4 passivation films; SiH4 gas; SiOxNy passivation films; VLSI; electrode spacings effects; gas flow effects; multilevel metallisation; plasma-enhanced chemical-vapor deposition; process parameters; sidewall film wet etch rate; sidewall step coverage; Aluminum; Electrodes; Hafnium; Passivation; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Scanning electron microscopy; Wet etching;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153045
