Title :
A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability
Author :
Aparin, V. ; Gazzerro, P. ; Jianjun Zhou ; Bo Sun ; Szabo, S. ; Zeisel, E. ; Segoria, T. ; Ciccarelli, S. ; Persico, C. ; Narathong, C. ; Sridhara, R.
Author_Institution :
QUALCOMM Inc., San Diego, CA, USA
Abstract :
A 0.5 μm SiGe BiCMOS single-chip receiver integrates three front-ends (LNA, RF-to-IF mixer, VGA) for the cellular, PCS/IMT and GPS frequency bands, a shared I/Q demodulator, IF VCO, and UHF LO buffers. It has 2.0 dB NF and -0.6 dBm IIP3 in the cellular CDMA mode and 2.3 dB NF and -7 dBm IIP3 in the PCS mode with <150 mW at 3 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Global Positioning System; cellular radio; code division multiple access; personal communication networks; radio receivers; semiconductor materials; 0.5 micron; 150 mW; 2 dB; 2.3 dB; 3 V; BiCMOS RF-to-baseband receiver; GPS capability; IF VCO; LNA; PCS/IMT frequency bands; RF-to-IF mixer; SiGe; SiGe BiCMOS single-chip receiver; UHF LO buffers; VGA; cellular frequency bands; quad-mode receiver; shared I/Q demodulator; tri-band receiver; wideband CDMA; wireless CDMA/WCDMA/AMPS applications; BiCMOS integrated circuits; Demodulation; Frequency; Germanium silicon alloys; Global Positioning System; Multiaccess communication; Noise measurement; Personal communication networks; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7335-9
DOI :
10.1109/ISSCC.2002.993022
